|Place of Origin:||TAIWAN|
|Model Number:||TC58NVG0S3HBAI6 TC58BVG1S3HTA00 TC58NVG1S3HTAI0 TC58NVG1S3ETA00 TC58BYG1S3HBAI6 TC58NVG2S0FTA00 TC58|
|Minimum Order Quantity:||760pcs|
|Payment Terms:||T/T ADVANCE|
TC58NVG1S3ETAI0 TC58NVG2S0FTA00 TC58NVG2S3ETA00 TC58NVG3S0FTA00
The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.