|Place of Origin:||TAIWAN|
|Model Number:||TC58NVG0S3HBAI6 TC58BVG1S3HTA00 TC58NVG1S3HTAI0 TC58NVG1S3ETA00 TC58BYG1S3HBAI6 TC58NVG2S0FTA00 TC58|
|Minimum Order Quantity:||760pcs|
|Payment Terms:||T/T ADVANCE|
TC58BVG0S3HBAI4 EEPROM SLC 1GB NAND 24NM 63FBGA
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION
The TC58BVG0S3HBAI4 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58BVG0S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG0S3HBAI4 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.