技术参数

• Part Status Active
• Memory Type Non-Volatile
• Memory Format FLASH
• Technology FLASH - NAND (SLC)
• Memory Size 4Gbit
• Memory Organization 512M x 8
• Memory Interface Parallel
• Write Cycle Time - Word, Page 25ns
• Access Time 20 ns
• Voltage - Supply 2.7V ~ 3.6V
• Operating Temperature -40°C ~ 85°C (TA)
• Mounting Type Surface Mount
• Package / Case 67-VFBGA
• Supplier Device Package 67-VFBGA (6.5x8)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• ECCN 3A991B1A
• HTSUS 8542.32.0071