技术参数

• Part Status Not For New Designs
• Memory Type Non-Volatile
• Memory Format FLASH
• Technology FLASH - NAND
• Memory Size 2Tbit
• Memory Organization 256G x 8
• Memory Interface UFS
• Clock Frequency 1.16 GHz
• Write Cycle Time - Word, Page -
• Voltage - Supply 2.4V ~ 2.7V, 2.7V ~ 3.6V
• Operating Temperature -25°C ~ 85°C (TC)
• Mounting Type Surface Mount
• Package / Case 153-VFBGA
• Supplier Device Package 153-BGA (11.5x13)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 3 (168 Hours)