技术参数

• Part Status Active
• Memory Type Non-Volatile
• Memory Format FLASH
• Technology FLASH - NAND (TLC)
• Memory Size 8Tbit
• Memory Organization 1T x 8
• Memory Interface UFS 4.0
• Clock Frequency 2.32 GHz
• Write Cycle Time - Word, Page -
• Voltage - Supply 2.4V ~ 2.7V
• Operating Temperature -25°C ~ 85°C
• Mounting Type Surface Mount
• Package / Case 153-WFBGA
• Supplier Device Package 153-WFBGA (11.5x13)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• ECCN 3A991B1A
• HTSUS 8542.32.0071