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1Gbit SLC

(14)
China TC58BVG0S3HBAI4  EEPROM SLC 1GB NAND 24NM 63FBGA factory

TC58BVG0S3HBAI4 EEPROM SLC 1GB NAND 24NM 63FBGA

TC58BVG0S3HBAI4 EEPROM SLC 1GB NAND 24NM 63FBGA original new TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG0S3HBAI4 is a single 3.3V 1 ... Read More
2020-02-03 14:42:31
China TC58BVG0S3HBAI4  Toshiba  BENAND-Flash 128Mx8 3.3V BGA63 factory

TC58BVG0S3HBAI4 Toshiba BENAND-Flash 128Mx8 3.3V BGA63

1 GBIT (128M × 8 BIT) CMOS NAND E2 The TC58BVG0S3HBAI4 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 ... Read More
2020-02-03 14:42:10
China TC58NVG0S3HTA00 SLC NAND Flash Parallel 3.3V 1Gbit 128K X 8bit 48-Pin factory

TC58NVG0S3HTA00 SLC NAND Flash Parallel 3.3V 1Gbit 128K X 8bit 48-Pin

Description Value Package 48TSOP-I Cell Type SLC NAND Density 1 Gb Architecture Sectored Block Organization Symmetrical Typical Operating Supply Voltage 3.3 V Sector Size 128Kbyte x 1024 Operating Temperature 0 ... Read More
2020-02-03 14:41:45
China TC58NVG0S3EBAI4 SLC NAND Flash 3.3V 1Gbit 63-Pin TFBGA factory

TC58NVG0S3EBAI4 SLC NAND Flash 3.3V 1Gbit 63-Pin TFBGA

Description Value Package 63TFBGA Cell Type SLC NAND Density 1 Gb Architecture Sectored Block Organization Symmetrical Typical Operating Supply Voltage 3.3 V Sector Size 128Kbyte x 1024 Operating Temperature ... Read More
2020-02-03 14:41:23
China TC58BVG0S3HBAI4 EEPROM SLC 1GB NAND 24NM 63FBGA factory

TC58BVG0S3HBAI4 EEPROM SLC 1GB NAND 24NM 63FBGA

The TC58BVG0S3HBAI4 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has ... Read More
2020-02-03 14:41:03
China TC58CVG0S3HRAIG  Toshiba 1GB SERIAL NAND 24NM WSON8 3.3V factory

TC58CVG0S3HRAIG Toshiba 1GB SERIAL NAND 24NM WSON8 3.3V

Serial Interface NAND original new Description Capacity (bit) 1G Tech. node (nm) 24 Page size (bit) (2048+64)×8 Block size (bit) (128K+4K)×8 I/O (bit) 1,2,4 Keyword SPI RoHS Compatible Product(s) (#) Available ... Read More
2020-02-03 14:40:47
China TC58NVG0S3HTA00 TC58BVG0SH3TA00 EEPROM SLC 1GB NAND 24NM 48TSOP factory

TC58NVG0S3HTA00 TC58BVG0SH3TA00 EEPROM SLC 1GB NAND 24NM 48TSOP

The TC58NVG0S3HTA00 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks. The device has ... Read More
2020-02-03 14:38:37
China TC58NVG0S3HTA00 TC58BVG0S3HTA00  Toshiba NAND-Flash 128M factory

TC58NVG0S3HTA00 TC58BVG0S3HTA00 Toshiba NAND-Flash 128M

TC58NVG0S3HTA00 Toshiba NAND-Flash 128M original new e-MMC e-MMC Consumer Grade AEC-Q100 Grade2 Process Capacity Capacity Part Number 4GB THGBMNG5D1LBAIT 8GB THGBMJG6C1LBAB7 4GB THGBMNG5D1LBAIL 16GB THGBMJG7C2L... Read More
2020-02-03 14:38:19
China TC58NVG0S3HBAI6 TC58NVG1S3HBIA4  Toshiba NAND Flash Serial 3.3V 1G-bit 128M factory

TC58NVG0S3HBAI6 TC58NVG1S3HBIA4 Toshiba NAND Flash Serial 3.3V 1G-bit 128M

TC58NVG0S3HBAI6 Toshiba NAND Flash Serial 3.3V 1G-bit 128M Below are the products we offering with short Lead time. original new 1G TC58BVG0S3HBAI4 FBGA63 1G TC58NVG0S3HBAI4 FBGA63 1G TC58BVG0S3HBAI6 FBGA67 1G ... Read More
2020-02-03 14:38:00
China TC58BVG0S3HBAI4 Toshiba  Electronic Components SLC NAND Flash 3.3V 1G-bit 63-Pin B factory

TC58BVG0S3HBAI4 Toshiba Electronic Components SLC NAND Flash 3.3V 1G-bit 63-Pin B

TC58BVG0S3HBAI4 Toshiba SLC NAND Flash 3.3V 1G-bit 63-Pin BGA TC58BVG1S3HBAI4 Toshiba BENAND-Flash 256Mx8 3.3V BGA63 original new e-MMC e-MMC Consumer Grade AEC-Q100 Grade2 Process Capacity Capacity Part Number ... Read More
2020-02-03 14:37:40
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